Therefore, an amplifier circuit can be configured using the active area. When a bipolar transistor is in the active region, the collector current is basically h FE times the base current. Therefore, if the emitter and collector terminals are reversed, a bipolar transistor has a much lower h FE and does not function as intended. (For example, in the case of an npn transistor, the collector and the emitter on both sides of the p region of the base are n regions, which look the same.) However, the dopant concentrations in the collector and emitter regions are quite different. Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. The structure of a bipolar transistor looks symmetrical. Two types of bipolar transistor are available, known as npn and pnp, based on the type of junction. Since the bipolar transistor was the first transistor to be invented, when one simply says "transistors," it sometimes means bipolar transistors. Whereas a field-effect transistor is a unipolar device, a bipolar transistor is so named because its operation involves two kinds of charge carriers, holes and electrons. Introduction Bipolar junction transistor definition A bipolar junction transistor or BJT is a three terminal electronic device that amplifies the flow of current. High-level injection and heavy doping induced band narrowing are introduced. Bipolar transistors are a type of transistor composed of pn junctions, which are also called bipolar junction transistors (BJTs). Bipolar Transistor CHAPTER OBJECTIVES This chapter introduces the bipolar junction transistor (BJT) operation and then presents the theory of the bipolar transistor I-V characteristics, current gain, and output conductance.
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